Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
| Autor: | Samuel Banks, Zhigang Xiao, Kim Kisslinger, Sam Chance |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences hafnium dioxide (hfo2) thin film zirconium dioxide (zro2) thin films Inorganic Chemistry Atomic layer deposition chemistry.chemical_compound cmos ring oscillator Gate oxide 0103 physical sciences lcsh:QD901-999 General Materials Science Thin film High-resolution transmission electron microscopy complementary metal-oxide semiconductor (cmos) integrated circuits Hafnium dioxide 010302 applied physics Zirconium Zirconium dioxide 021001 nanoscience & nanotechnology Condensed Matter Physics Hafnium chemistry lcsh:Crystallography 0210 nano-technology |
| Zdroj: | Crystals, Vol 10, Iss 2, p 136 (2020) Crystals Volume 10 Issue 2 |
| ISSN: | 2073-4352 |
| Popis: | We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared. |
| Databáze: | OpenAIRE |
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