40 Gbit/s high voltage modulator driver in P-HEMT technology

Autor: A. Thiede, F. Steinhagen, M. Ludwig, Volker Hurm, Axel Hulsmann, M. Leich, Michael Schlechtweg
Přispěvatelé: Publica
Rok vydání: 1999
Předmět:
Zdroj: Electronics Letters. 35:1842
ISSN: 0013-5194
DOI: 10.1049/el:19991226
Popis: A high speed modulator driver has been developed and realised using GaAs P-HEMT technology. The driver is realised as a distributed amplifier and gives an output signal with a voltage swing of >5 V at a data rate of 40 Gbit/s.
Databáze: OpenAIRE