A K/Ka-band distributed power amplifier with capacitive drain coupling
| Autor: | M.J. Schindler, M.P. Zaitlin, J.P. Wendler, J.R. Dormail, M.E. Miller |
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| Rok vydání: | 1988 |
| Předmět: |
FET amplifier
Radiation Materials science business.industry Amplifier Capacitive sensing Transistor Electrical engineering Distributed amplifier Gain compression Integrated circuit Condensed Matter Physics Power (physics) law.invention Capacitor law K band Optoelectronics Ka band Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 36:1902-1907 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.17431 |
| Popis: | A 14 to 37-GHz monolithic microwave integrated-circuit (MMIC) distributed-power amplifier is described that has three FETs (field-effect transistors) of varying periphery, all capacitively coupled to the gate line. The capacitor is inserted between the drain line and the drain of any FET seeing a low or negative impedance. This deceases drain line loading and increases the impedance at the drains. High total-FET-periphery can be accommodated, achieving higher output power. A 4-dB gain was achieved from 14 to 37 GHz. Output power of 20 dBm or greater has been demonstrated at frequencies up to 33 GHz at 1 dB compression. A maximum 1-dB compressed output power of 23.5 dBm (220 mw) has been measured at 26 GHz. The circuit is truly monolithic, with all bias and matching circuitry included on the chip. > |
| Databáze: | OpenAIRE |
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