Structural study of InGaAsÕGaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 mu m
| Autor: | Massimo Longo, S. Antonaci, Annalisa Convertino, Antonietta Taurino, Massimo Catalano, A. Passaseo, Ross Rinaldi, R. Cingolani |
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| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Fabrication
Materials science business.industry General Physics and Astronomy Nanotechnology Chemical vapor deposition law.invention Gallium arsenide chemistry.chemical_compound chemistry law Quantum dot Optoelectronics Metalorganic vapour phase epitaxy business Layer (electronics) Wetting layer Light-emitting diode |
| Zdroj: | Journal of applied physics 89 (2001): 4341–4348. doi:10.1063/1.1351861 info:cnr-pdr/source/autori:A. Passaseo, R. Rinaldi, M. Longo, S. Antonaci, A. L. Convertino, and R. Cingolani A. Taurino and M. Catalano/titolo:Structural study of InGaAsÕGaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 mu m/doi:10.1063%2F1.1351861/rivista:Journal of applied physics/anno:2001/pagina_da:4341/pagina_a:4348/intervallo_pagine:4341–4348/volume:89 |
| DOI: | 10.1063/1.1351861 |
| Popis: | We have studied the influence of difference growth conditions on the two-dimensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots (QDs) optimized for applications to optical devices operating around 1.3 mum (In content x approximate to0.5). The dots are grown by low-pressure metalorganic chemical vapor deposition on GaAs substrates. We demonstrate that the critical layer thickness corresponding to optimized single-QD layer structures (i.e., with reduced wetting layer thickness and high uniformity) can be controlled by kinetic effects. The optimized growth conditions allow us to grow six-layers stacked QD structures as active material for the fabrication of a light emitting devices operating around 1.3 mum at room temperature. |
| Databáze: | OpenAIRE |
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