Ferroelectric Domain Wall Memristor

Autor: Charlotte Cochard, Michele Conroy, Kalani Moore, Long Qing Chen, J. Marty Gregg, Ursel Bangert, Yueze Tan, Haidong Lu, James P. V. McConville, Alexei Gruverman, Bo Wang, Alan Harvey
Přispěvatelé: EPSRC
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Advanced Functional Materials
McConville, J P V, Lu, H, Wang, B, Tan, Y, Cochard, C, Conroy, M, Harvey, A, Bangert, U, Chen, L-Q, Gruverman, A & Gregg, J M 2020, ' Ferroelectric Domain Wall Memristor ', Advanced Functional Materials, vol. 122, 2000109 . https://doi.org/10.1002/adfm.202000109
ISSN: 1616-3028
1616-301X
Popis: A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric‐field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
By changing the density of conducting ferroelectric domain walls that straddle the interelectrode gap, it is shown that a large number of different direct current resistance states can be created, in parallel‐plate thin film lithium niobate capacitors. Surprisingly, such microstructural manipulation can result in colossal changes in device resistance (over twelve orders of magnitude).
Databáze: OpenAIRE
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