The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
| Autor: | Tomas Jungwirth, Andrew C. Irvine, Jairo Sinova, C. S. King, C. T. Foxon, J. Wunderlich, Karel Výborný, K. Olejník, B. L. Gallagher, K. W. Edmonds, Alexey A. Kovalev, R. P. Campion, A. W. Rushforth, Vít Novák |
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| Rok vydání: | 2007 |
| Předmět: |
Physics
Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Magnetoresistance Astrophysics::Instrumentation and Methods for Astrophysics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Condensed Matter Physics Boltzmann equation Electronic Optical and Magnetic Materials Impurity Lattice (order) Phenomenological model Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Computer Science::Mathematical Software Thin film Anisotropy Lithography |
| DOI: | 10.48550/arxiv.0712.2581 |
| Popis: | We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. Comment: Submitted to JMMM for conference proceedings of WUN-SPIN 2007 (York, UK) |
| Databáze: | OpenAIRE |
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