High-Speed Alkaline Etching for Backside Exposure of Through Silicon Vias

Autor:	Kazuhiro Yoshikawa, Takumi Miyazaki, Masahiro Aoyagi, Naoya Watanabe
Rok vydání:	2013
Předmět:	Alkaline etching Materials science Silicon chemistry Nanoelectronics chemistry.chemical_element Reactive-ion etching Engineering physics
Zdroj:	ECS Transactions. 50:39-48
ISSN:	1938-6737 1938-5862
DOI:	10.1149/05014.0039ecst
Popis:	We developed the high-speed alkaline etching of silicon for backside exposure of through silicon vias (TSVs). The spin etching rate of silicon was 2.1-6.6 μm/min when an accelerator was added to KOH solution. The etching rate ratio of silicon to Tetraethyl orthosilicate (TEOS) SiO2 was 66-125. We also applied KOH/accelerator solution to 8-inch Si (100) wafer with buried Cu/Ta vias. The most of buried Cu/Ta vias were uniformly exposed. The terraced structures were generated in the Si surface, although their step height was so small as to be negligible for practical application.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbe3393562d40a3e5e1f7a5ac911ff5b https://doi.org/10.1149/05014.0039ecst Zobrazit plný text záznamu