Cryogenic GaAs-FET amplifiers for SQUIDS

Autor: H. Ahola, P. Ostman, G.J. Ehnholm, B. Rantala
Rok vydání: 1979
Předmět:
Zdroj: Journal of Low Temperature Physics. 35:313-328
ISSN: 1573-7357
0022-2291
DOI: 10.1007/bf00115582
Popis: Gallium arsenide field effect transistor amplifiers for use with SQUIDs and operating at 4.2 K in the frequency range 50–500 MHz have been developed. The system sensitivity is limited by intrinsic SQUID noise and is 5 × 10−30 J/Hz at 500 MHz. Further improvement can be obtained by cooling the SQUID. The methods of obtaining proper impedance matching to the transistor are discussed both theoretically and in connection with practical measurements.
Databáze: OpenAIRE