GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
Autor: | Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grunenputt, J., Sommer, D., Blanck, H., Lambert, B., Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M. |
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Rok vydání: | 2022 |
Zdroj: | 2022 IEEE International Reliability Physics Symposium (IRPS) |
Databáze: | OpenAIRE |
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