GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Autor: Chiocchetta, F., De Santi, C., Rampazzo, F., Mukherjee, K., Grunenputt, J., Sommer, D., Blanck, H., Lambert, B., Gerosa, A., Meneghesso, G., Zanoni, E., Meneghini, M.
Rok vydání: 2022
Zdroj: 2022 IEEE International Reliability Physics Symposium (IRPS)
DOI: 10.1109/irps48227.2022.9764510
Databáze: OpenAIRE