Tunable BiCMOS continuous-time filter for high-frequency applications
Autor: | R. Alini, Rinaldo Castello, Andrea Baschirotto |
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Přispěvatelé: | Alini, R, Baschirotto, A, Castello, R |
Rok vydání: | 1992 |
Předmět: |
equivalent nondominant pole
Frequency response linear region THD Low-pass filter 2 micron quality factor tunable filter BiCMOS cutoff frequency tuning econd-order low-pass filter 30 mW Electrical and Electronic Engineering 8 to 32 MHz Active filter BiCMOS continuous-time filter active filter Physics low-pass filter Total harmonic distortion high-frequency application business.industry Electrical engineering Q-factor power consumption BiCMOS fully differential transconductor Cutoff frequency BiCMOS integrated circuit Filter (video) Q factor total harmonic distortion business MOS transistor linear integrated circuit |
Zdroj: | IEEE Journal of Solid-State Circuits. 27:1905-1915 |
ISSN: | 0018-9200 |
DOI: | 10.1109/4.173121 |
Popis: | A new BiCMOS fully differential transconductor based on MOS transistors operated in the linear region is presented. The circuit has an equivalent nondominant pole located above 1.5 GHz. This makes it suitable for high-frequency continuous-time filters. A second-order low-pass filter using the new transconductor realized in a 2-pm BiCMOS technology is reported. The cutoff frequency f0 of the cell is tunable in the range of 8–32 MHz and the quality factor is 2. The filter THD stays lower than -40 dB for an output signal up to 3.2 Vp.p at 5-MHz frequency. The area of the cell is 0.322 mm2 and the power consumption (with f0 = 25 MHz) is 30 mW with a single 5-V power supply. © 1992 IEEE |
Databáze: | OpenAIRE |
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