Open-circuit voltage increase dynamics in high and low deposition rate polymorphous silicon solar cells
| Autor: | Marie-Estelle Gueunier-Farret, P. Roca i Cabarrocas, F. Dadouche, Jean-Paul Kleider, Erik Johnson |
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| Přispěvatelé: | Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Schneegans, Olivier |
| Jazyk: | francouzština |
| Rok vydání: | 2010 |
| Předmět: |
In situ
Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 7. Clean energy 01 natural sciences 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS Diode 010302 applied physics Open-circuit voltage Dynamics (mechanics) Doping ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Deposition rate ComputingMilieux_MANAGEMENTOFCOMPUTINGANDINFORMATIONSYSTEMS chemistry InformationSystems_MISCELLANEOUS 0210 nano-technology Voltage |
| Zdroj: | physica status solidi (a) physica status solidi (a), Wiley, 2010, 207 (3), pp.691-694 HAL Proceedings of International Conference on Amorphous and Nanocrystalline Semiconductors 23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23 23rd International Conference on Amorphous and Nanocrystalline Semiconductors-ICANS23, 2009, Utrecht, Netherlands physica status solidi (a), 2010, 207 (3), pp.691-694 |
| ISSN: | 0031-8965 1862-6319 |
| Popis: | The dynamics of the open-circuit voltage (V OC ) of polymorphous silicon (pm-Si:H) solar cells deposited at high and low rates (8 and 1.5 A/s, HR and LR) and containing lightly or heavily doped p-layers (LD or HD) are compared through in situ, variable intensity measurements during light-soaking (LS). The V OC 's of the LR cells show an increase with LS, regardless of doping level, whereas the HR cells show decreasing V OC 's. This result is in contrast to the changes predicted by the dark diode characteristics, which predict increasing Voc for all the devices. The device measurements are compared to the analogous measurements on co-deposited coplanar p-i layer stacks to determine whether the V oc dynamics can be linked to changes in the p-layer doping efficiency during LS. The changes to the macroscopic electrical behaviour of the cell under varying light conditions are modelled using a simple, three parameter function, and are compared to results from a detailed, numerical modelling tool, AFORS-HET. |
| Databáze: | OpenAIRE |
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