Highly n-doped graphene generated through intercalated terbium atoms
Autor: | J. L. Bubendorff, A. Florentin, Lakshya Daukiya, M. Cranney, Günter Reiter, Dominique Aubel, Maya N. Nair, Samar Hajjar-Garreau, François Vonau, Emmanuel Denys, L. Simon |
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Přispěvatelé: | Institut de Science des Matériaux de Mulhouse (IS2M), Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA) |
Jazyk: | angličtina |
Rok vydání: | 2018 |
Předmět: |
Materials science
Graphene Intercalation (chemistry) chemistry.chemical_element Physics::Optics Terbium Angle-resolved photoemission spectroscopy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics 0104 chemical sciences law.invention Brillouin zone Condensed Matter::Materials Science X-ray photoelectron spectroscopy chemistry law Condensed Matter::Superconductivity Physics::Atomic and Molecular Clusters [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] 0210 nano-technology Electronic band structure Spectroscopy |
Zdroj: | Physical Review B: Condensed Matter and Materials Physics (1998-2015) Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 97 (3), ⟨10.1103/PhysRevB.97.035309⟩ |
ISSN: | 1098-0121 1550-235X |
DOI: | 10.1103/PhysRevB.97.035309⟩ |
Popis: | We obtained highly $n$-type doped graphene by intercalating terbium atoms between graphene and SiC(0001) through appropriate annealing in ultrahigh vacuum. After terbium intercalation angle-resolved-photoelectron spectroscopy (ARPES) showed a drastic change in the band structure around the $K$ points of the Brillouin zone: the well-known conical dispersion band of a graphene monolayer was superposed by a second conical dispersion band of a graphene monolayer with an electron density reaching ${10}^{15}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. In addition, we demonstrate that atom intercalation proceeds either below the buffer layer or between the buffer layer and the monolayer graphene. The intercalation of terbium below a pure buffer layer led to the formation of a highly $n$-doped graphene monolayer decoupled from the SiC substrate, as evidenced by ARPES and x-ray photoelectron spectroscopy measurements. The band structure of this highly $n$-doped monolayer graphene showed a kink (a deviation from the linear dispersion of the Dirac cone), which has been associated with an electron-phonon coupling constant one order of magnitude larger than those usually obtained for graphene with intercalated alkali metals. |
Databáze: | OpenAIRE |
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