Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies
| Autor: | Boris B. Lončar, R Djordje Lazarevic, S Irfan Fetahovic, Edin Dolicanin |
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| Rok vydání: | 2017 |
| Předmět: |
non-volatile memory
Materials science Hardware_MEMORYSTRUCTURES radiation effect business.industry Radiation Radiation effect Ferroelectricity Resistive random-access memory Non-volatile memory Phase-change memory magneto-resistive RAM ferroelectric RAM phase change memory Nuclear Energy and Engineering Ferroelectric RAM lcsh:QC770-798 Optoelectronics lcsh:Nuclear and particle physics. Atomic energy. Radioactivity resistive RAM Safety Risk Reliability and Quality business Radiation hardening |
| Zdroj: | Nuclear technology and radiation protection Nuclear Technology and Radiation Protection, Vol 32, Iss 4, Pp 381-392 (2017) |
| Popis: | In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007] |
| Databáze: | OpenAIRE |
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