Lithography for robust and editable atomic-scale silicon devices and memories
| Autor: | Robert A. Wolkow, Taleana Huff, Roshan Achal, Martin Cloutier, Jeremiah Croshaw, Jason L. Pitters, David Churchill, Marco Taucer, Mohammad Rashidi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Fabrication
Silicon Computer science Science General Physics and Astronomy chemistry.chemical_element Nanotechnology 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Atomic units General Biochemistry Genetics and Molecular Biology Article law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Thermal stability Physics::Atomic Physics 010306 general physics lcsh:Science Lithography Multidisciplinary business.industry General Chemistry 021001 nanoscience & nanotechnology Semiconductor chemistry lcsh:Q Scanning tunneling microscope 0210 nano-technology Error detection and correction business |
| Zdroj: | Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018) Nature Communications |
| ISSN: | 2041-1723 |
| Popis: | At the atomic scale, there has always been a trade-off between the ease of fabrication of structures and their thermal stability. Complex structures that are created effortlessly often disorder above cryogenic conditions. Conversely, systems with high thermal stability do not generally permit the same degree of complex manipulations. Here, we report scanning tunneling microscope (STM) techniques to substantially improve automated hydrogen lithography (HL) on silicon, and to transform state-of-the-art hydrogen repassivation into an efficient, accessible error correction/editing tool relative to existing chemical and mechanical methods. These techniques are readily adapted to many STMs, together enabling fabrication of error-free, room-temperature stable structures of unprecedented size. We created two rewriteable atomic memories (1.1 petabits per in2), storing the alphabet letter-by-letter in 8 bits and a piece of music in 192 bits. With HL no longer faced with this trade-off, practical silicon-based atomic-scale devices are poised to make rapid advances towards their full potential. Manipulation at the atomic scale comes with a trade-off between simplicity and thermal stability. Here, Achal et al. demonstrate improved automated hydrogen lithography and repassivation, enabling error-corrected atomic writing of large-scale structures/memories that are stable at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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