Electrical properties of Graphene/Silicon structure with Al2O3 interlayer
| Autor: | Ozkan Bayram, Elif Oz Orhan, Sema Bilge Ocak, Adem Tataroğlu, Nuriye Kaymak |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon Graphene Analytical chemistry Conductance chemistry.chemical_element Substrate (electronics) Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention symbols.namesake Depletion region chemistry law 0103 physical sciences Monolayer symbols Electrical and Electronic Engineering Bilayer graphene Raman spectroscopy |
| Popis: | The electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance–voltage (C/G–V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G–V and C–V measurements of this structure have been performed in 10 kHz–400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density ( $$D_{{{\text{it}}}}$$ ) and series resistance ( $$R_{{\text{s}}}$$ ) values. The values of $$D_{{{\text{it}}}}$$ and $$R_{{\text{s}}}$$ are dependent on frequency and increase with decreasing frequency. The $$R_{{\text{s}}} - V$$ graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|