Spectroscopy of buried states in black phosphorus with surface doping
| Autor: | Evangelos Papalazarou, Marino Marsi, Yingchun Cheng, Bingbing Tian, Zailan Zhang, Armina Taleb-Ibrahimi, Christine Giorgetti, Jean-Pascal Rueff, Zhesheng Chen, Jingwei Dong, Luca Perfetti, Qingwei Ma |
|---|---|
| Přispěvatelé: | Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Shenzhen University [Shenzhen], Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie Physique - Matière et Rayonnement (LCPMR), Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Band gap Angle-resolved photoemission spectroscopy 02 engineering and technology Electronic structure 01 natural sciences Molecular physics law.invention Condensed Matter::Materials Science band gap engineering law 0103 physical sciences General Materials Science 010306 general physics Electronic band structure Graphene business.industry electron doping Mechanical Engineering Doping Black phosphorus General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics electronic structure Semimetal Semiconductor Mechanics of Materials [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] time-resolved ARPES 0210 nano-technology business |
| Zdroj: | 2D Materials 2D Materials, IOP Publishing, 2020, 7 (3), pp.035027. ⟨10.1088/2053-1583/ab8ec1⟩ 2D Materials, 2020, 7 (3), pp.035027. ⟨10.1088/2053-1583/ab8ec1⟩ |
| ISSN: | 2053-1583 |
| DOI: | 10.1088/2053-1583/ab8ec1⟩ |
| Popis: | International audience; Electrostatic gating or alkali metal evaporation can be successfully employed to tune the interface of layered black phosphorus (BP) from a semiconductor to a 2D Dirac semimetal. Although Angle Resolved Photoelectron Spectroscopy (ARPES) experiments have captured the collapse of the band gap in the inversion layer, a quantitative estimation of band structure evolution has been hindered by the short escape depth and matrix elements of the probed photoelectrons. Here, we precisely monitor the evolution of electronic states using time-resolved ARPES at a photon energy of 6.3 eV. The probing depth of laser-based ARPES is long enough to observe the buried electronic states originating from the valence band maximum. Our data shows that the band gap has a maximal value of 0.32 eV in the pristine sample, and that it shrinks down monotonically by increasing the carrier concentration in the topmost layer. Most interestingly, the band velocity of the valence band increases by a factor of two along the armchair direction, surpassing the value reported in graphene on silicon carbide (SiC). This control of band structure via external gating will be of interest with regard to the design of optoelectronic devices. |
| Databáze: | OpenAIRE |
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