Doping incorporation paths in catalyst-free Be-doped GaAs nanowires
| Autor: | Anna Fontcuberta i Morral, Claus B. Sørensen, Jason A. Röhr, Carlo Colombo, Alberto Casadei, Shivendra Upadhyay, Thibaud Ruelle, Jesper Nygård, Peter Krogstrup, Martin Heiss |
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| Rok vydání: | 2012 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Physics and Astronomy (miscellaneous) business.industry Doping Nanowire Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Catalysis 0103 physical sciences Optoelectronics Electrical measurements 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters |
| DOI: | 10.48550/arxiv.1210.1670 |
| Popis: | The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorporation path through the Ga droplet is negligible. We also demonstrate that Be can diffuse into the volume of the nanowire giving an alternative incorporation path. This work is an important step towards controlled doping of nanowires and will serve as a help for designing future devices based on nanowires. Comment: 4 pages, 4 figures |
| Databáze: | OpenAIRE |
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