Target surface oxide layer formed by reactive sputtering of Ti target in Ar+O_2 mixed gas
| Autor: | Kenji Takamura, Yoshio Abe, Katsutaka Sasaki, Midori Kawamura |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Argon
Materials science Oxide Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Sputter deposition Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Ellipsometry Sputtering ComputingMethodologies_DOCUMENTANDTEXTPROCESSING Wafer Thin film Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23(5):1371-1374 |
| Popis: | Reactive sputtering is one of the most widely used techniques for preparing compound thin films. In this study, a Ti model target, a 1 μm thick Ti film sputter deposited on a Si wafer, was used as the sputtering target. The thickness of the oxide layer formed on the surface of the model target after sputtering in an Ar+O_2 mixed gas atmosphere was measured by ellipsometry under various varying processing parameters including oxygen flow ratio, sputtering time, rf power, and total gas pressure. The oxide layer thickness was varied from a few nanometers to approximately 100 nm by changing the parameters, and a nonuniform oxide layer thickness was observed on the target surface. application/pdf |
| Databáze: | OpenAIRE |
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