Direct spectral probing of energy storage in Si:Er by a free-electron laser

Autor:	J. M. Langer, Tom Gregorkiewicz, D. T. X. Thao
Přispěvatelé:	WZI (IoP, FNWI)
Rok vydání:	1999
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) business.industry Free-electron laser Physics::Optics chemistry.chemical_element Laser law.invention Erbium Semiconductor chemistry law Optoelectronics business Spectroscopy Luminescence Excitation
Zdroj:	Applied Physics Letters, 75, 4121-4123. American Institute of Physics
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.125556
Popis:	Results of a two-color spectroscopy in the visible and the mid-infrared on erbium-doped silicon (Si:Er) are presented. In the experiments, pulsed beam provided by a free-electron laser is directed on a sample under primary above-band-gap excitation with another laser. It is shown that the powerful infrared beam can be ionize carriers localized at shallow traps. Liberation of these carriers makes them available for excitation of erbium and thereby enhances the luminescence intensity. Identification of shallow levels responsible for the effect is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa35b242621895376bf3dd3a4c0bd60f https://doi.org/10.1063/1.125556 Zobrazit plný text záznamu