Evidence for gap anisotropy in
| Autor: | G. Lapertot, Georg Knebel, Julien Derr, Jacques Flouquet, Satoru Kunii, Bernard Salce |
|---|---|
| Přispěvatelé: | Reproduction et développement des plantes (RDP), École normale supérieure de Lyon (ENS de Lyon)-Institut National de la Recherche Agronomique (INRA)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), CEA Grenoble (CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Tohoku University [Sendai] |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
[PHYS]Physics [physics]
Valence (chemistry) Materials science Condensed matter physics Band gap Kondo insulator Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal Residual resistivity Electrical resistivity and conductivity uniaxial stress measurement Kondo effect Anisotropy gap anisotropy |
| Zdroj: | Journal of Magnetism and Magnetic Materials Journal of Magnetism and Magnetic Materials, 2007, 310 (2), pp.560-562. ⟨10.1016/j.jmmm.2006.10.150⟩ |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2006.10.150⟩ |
| Popis: | Resistivity measurements under uniaxial stress have been performed on the intermediate valence compound SmB 6 for various directions of the crystal. The experimental technique allows us to explore a limited pressure area (basically 0–3 kbar). Nevertheless, the results clearly show an anisotropy; indeed, the effect of the stress in the decrease of the residual resistivity is much higher in the 1 1 1 > direction than in the 1 0 0 > and the 1 1 0 > orientations. This change is witness to the gap anisotropy which must be linked to the theory of excitonic semiconductors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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