Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

Autor: Rozenn Bernard, Mekan Piriyev, Gabriel Loget, Nicolas Bertru, Jacky Even, Philippe Schieffer, Lipin Chen, Christophe Levallois, Charles Cornet, Laurent Pedesseau, Imen Jadli, Sylvain Tricot, Bruno Fabre, Pascal Turban, Julie Le Pouliquen, Alexandre Beck, T. Rohel, Yoan Léger
Přispěvatelé: Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique de Rennes (IPR), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), China Scholarship Council. Grant Number: 2017–6254, HPC resources of TGCC/CINES/IDRIS. Grant Numbers: 2020-A0080911434, 2021-A0100911434, Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)
Jazyk: angličtina
Rok vydání: 2021
Předmět:
energy harvesting
2D topological semimetal
Materials science
photo‐electro‐chemistry
Science
General Chemical Engineering
photonics
General Physics and Astronomy
Medicine (miscellaneous)
hybrid heterostructures
02 engineering and technology
7. Clean energy
01 natural sciences
Biochemistry
Genetics and Molecular Biology (miscellaneous)
photo-electro-chemistry
0103 physical sciences
General Materials Science
010306 general physics
Research Articles
ComputingMilieux_MISCELLANEOUS
[PHYS]Physics [physics]
III–V/Si
Ambipolar diffusion
business.industry
General Engineering
Heterojunction
[CHIM.CATA]Chemical Sciences/Catalysis
021001 nanoscience & nanotechnology
Semimetal
Semiconductor
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
ambipolar properties
Charge carrier
Photonics
0210 nano-technology
business
Hybrid material
Science
technology and society
III-V/Si
Research Article
Zdroj: Advanced Science
Advanced Science, Wiley Open Access, 2021, pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, Vol 9, Iss 2, Pp n/a-n/a (2022)
ISSN: 2198-3844
DOI: 10.1002/advs.202101661⟩
Popis: Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors with 2D topological semi‐metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first‐principle calculations, it is shown that the bi‐domain III–V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo‐generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection. Besides, the original topological properties of the 2D semi‐metallic inclusions are also discussed. This comb‐like heterostructure not only merges the superior optical properties of semiconductors with good transport properties of metallic materials, but also combines the high efficiency and tunability afforded by III–V inorganic bulk materials with the flexible management of nano‐scale charge carriers usually offered by blends of organic materials. Physical properties of these novel hybrid heterostructures can be of great interest for energy harvesting, photonic, electronic or computing devices.
Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors with 2D topological semi metallic vertical inclusions, endowed with ambipolar properties. Operating III–V/Si photoelectrodes confirm that this hybrid material can by itself photogenerate and laterally separate carriers, which are efficiently extracted afterward from the photoelectric device.
Databáze: OpenAIRE
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