Study on resist performance of chemically amplified molecular resists based on cyclic oligomers
Autor: | Hiroto Kudo, Takahiro Kozawa, Hiroki Yamamoto |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: |
Materials science
Chemically amplified resist Extreme ultraviolet lithography Dimer Photochemistry chemistry.chemical_compound Calixarene Polymer chemistry Molecule Noria derivative Molecular resist Electrical and Electronic Engineering Lithography Noria chemistry.chemical_classification Cyclodextrin 関西大学 Calixarene derivative Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Extreme ultraviolet Resist chemistry Kansai University |
Zdroj: | Microelectronic Engineering. 133:16-22 |
ISSN: | 0167-9317 |
Popis: | Display Omitted We developed positive-tone chemically amplified molecular resist materials based on cyclic oligomers.We clarified that a small modification of noria resists can cause a significant change in sensitivity.Cyclic oligomers have the potential to offer exceptional resolution as EUV and EB resist materials. Novel resist materials are required for lithographic processing with ionization radiation such as extreme ultraviolet (EUV) and electron beam (EB) exposure tools. In this study, we synthesized positive-tone chemically amplified molecular resist materials with pendant adamantyl ester (AD) and cyclohexyl 2-propyl ether moieties based on cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar5]arene, and we examined the lithographic performances of sensitivity, etching durability, and patterning under EUV and EB exposure. We clarified that the sensitivity of the resist materials was consistent with the structure of the cyclic oligomers, i.e., the hole size of the molecular structure might be an important factor relevant to high-resolution resist materials. We found that chemically amplified molecular resists based on cyclic oligomers such as noria, calixarene dimer, cyclodextrin, and pillar5]arene are promising candidates for higher-resolution resist materials. |
Databáze: | OpenAIRE |
Externí odkaz: |