Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
| Autor: | Lucas Güniat, Jelena Vukajlovic-Plestina, Pablo Romero-Gomez, Andrea Giunto, Luca Francaviglia, Martin Friedl, Heidi Potts, Gözde Tütüncüoglu, Anna Fontcuberta i Morral, Wonjong Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Oxide Nanowire Bioengineering 02 engineering and technology 01 natural sciences Stress (mechanics) Condensed Matter::Materials Science chemistry.chemical_compound 0103 physical sciences General Materials Science 010306 general physics Quantum Envelope (waves) Condensed matter physics business.industry Mechanical Engineering General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Semiconductor chemistry Quantum dot Light emission 0210 nano-technology business |
| Zdroj: | Nano Letters |
| ISSN: | 1530-6992 |
| Popis: | Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|