Quantifying the Influence of Defects on Selectivity of Electrodes Encapsulated by Nanoscopic Silicon Oxide Overlayers

Autor:	William D. H. Stinson, Kelly M. Brayton, Shane Ardo, A. Alec Talin, Daniel V. Esposito
Rok vydání:	2022
Předmět:	General Materials Science
Zdroj:	ACS Applied Materials & Interfaces. 14:55480-55490
ISSN:	1944-8252 1944-8244
Popis:	Encapsulation of electrocatalysts and photocatalysts with semipermeable nanoscopic oxide overlayers that exhibit selective transport properties is an attractive approach to achieve high redox selectivity. However, defects within the overlayers─such as pinholes, cracks, or particle inclusions─may facilitate local high rates of parasitic reactions by creating pathways for facile transport of undesired reactants to exposed active sites. Scanning electrochemical microscopy (SECM) is an attractive method to determine the influence of defects on macroscopic performance metrics thanks to its ability to measure the relative rates of competing electrochemical reactions with high spatial resolution over the electrode. Here, we report the use of SECM to determine the influence of overlayer defects on the selectivity of silicon oxide (SiO
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f98b738112349ad55bdcdc7104dfd0b0 https://doi.org/10.1021/acsami.2c13646 Zobrazit plný text záznamu