Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Autor:	Tuhin Maity, Daisy Gomersall, Judith L. MacManus-Driscoll, Kai Arstila, Andrew J. Flewitt, Robert L. Z. Hoye, Sami Kinnunen, Mari Napari, Timo Sajavaara, Tahmida N. Huq, Kham M. Niang, Armin Barthel, Juliet E. Thompson
Přispěvatelé:	Magdalene College, University of Cambridge, Royal Academy of Engineering, Royal Academy Of Engineering
Rok vydání:	2020
Předmět:	Materials science Analytical chemistry nickel oxide 02 engineering and technology Chemical vapor deposition Conductivity 01 natural sciences chemical vapor deposition Atomic layer deposition 0103 physical sciences lcsh:TA401-492 Antiferromagnetism Thin film 010302 applied physics lcsh:T58.5-58.64 kemialliset reaktiot kemialliset ilmiöt lcsh:Information technology Nickel oxide solution deposition atomikerroskasvatus 021001 nanoscience & nanotechnology eye diseases thin films atomic layer deposition lcsh:Materials of engineering and construction. Mechanics of materials sense organs ohutkalvot 0210 nano-technology
Zdroj:	InfoMat InfoMat, Vol 2, Iss 4, Pp 769-774 (2020)
ISSN:	2567-3165
DOI:	10.1002/inf2.12076
Popis:	Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Databáze:	OpenAIRE
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