Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter
| Autor: | Norshakila Haris, Peter B. K. Kyabaggu, Ali A. Rezazadeh |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Coplanar waveguide Schottky diode 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Limiter Optoelectronics Equivalent circuit Electrical and Electronic Engineering 0210 nano-technology business Monolithic microwave integrated circuit Microwave Voltage |
| Zdroj: | Haris, N, Kyabaggu, P B K & Rezazadeh, A 2016, ' Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter ', Semiconductor Science and Technology, vol. 31, no. 7, 075007 . https://doi.org/10.1088/0268-1242/31/7/075007 |
| DOI: | 10.1088/0268-1242/31/7/075007 |
| Popis: | A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm2 is formed by using double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated with a low-loss V-shaped coplanar waveguide multilayer structure. The electrical parameter characteristics of the pHEMT Schottky diodes are presented including the C–V profile showing the presence of a double channel in the device layer structure. This unique feature can also be seen from the double-peak responses of the electron density as a function of the device layer width, which represent the high electron concentration at two different 2-DEG layers of the structure. An equivalent circuit model of pHEMT Schottky diodes is demonstrated showing good agreement with the measurement results. At zero-bias condition, the devices show high performance in diode detector applications with voltage sensitivities of more than 89 mV μW−1 at 10 GHz and at least 5.4 mV μW−1 at 35 GHz. The measurement results of the limiter circuit demonstrated the blocking of input power signals greater than 20 dBm input power at 3 GHz. To the best of our knowledge this is the first demonstration of the use of pHEMT Schottky diodes in microwave power limiter applications. |
| Databáze: | OpenAIRE |
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