Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods
| Autor: | Philippe Collot, Christine Videlot-Ackermann, Cyril Martini, Sébastien Sanaur, Noriyuki Yoshimoto, J. Ackermann, Frédéric Fages, Mickaël Barret, A. Suzuki, Hugues Brisset, Yahia Didane |
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| Přispěvatelé: | Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Département Packaging et Supports Souples (PS2-ENSMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC, Centre Microélectronique de Provence - Site Georges Charpak (CMP-GC) (CMP-ENSMSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Departement of Materials Science and Engineering, Iwate university, Department of Materials Science and Engineering |
| Rok vydání: | 2010 |
| Předmět: |
Analytical chemistry
02 engineering and technology 010402 general chemistry 01 natural sciences Vacuum evaporation law.invention Crystallinity Vacuum deposition Optical microscope law Materials Chemistry [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Thin film business.industry Chemistry Metals and Alloys Surfaces and Interfaces 021001 nanoscience & nanotechnology 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer Organic semiconductor Thin-film transistor Optoelectronics 0210 nano-technology business |
| Zdroj: | Thin Solid Films Thin Solid Films, Elsevier, 2010, 518 (18), pp.5311-5320. ⟨10.1016/j.tsf.2010.03.079⟩ Thin Solid Films, 2010, 518 (18), pp.5311-5320. ⟨10.1016/j.tsf.2010.03.079⟩ |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.03.079 |
| Popis: | International audience; We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spincoating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DHDS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment...) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices. |
| Databáze: | OpenAIRE |
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