Large-area MoS 2 deposition via MOVPE
| Autor: | S. Nordmann, Tilmar Kümmell, Andrei Vescan, Christoph Stampfer, C. Franzen, Joachim Knoch, Holger Kalisch, Gerd Bacher, M. Marx, Dominik Andrzejewski, Michael Heuken |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Sulfide Annealing (metallurgy) Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences Molybdenum hexacarbonyl Inorganic Chemistry chemistry.chemical_compound symbols.namesake Materials Chemistry Metalorganic vapour phase epitaxy Elektrotechnik chemistry.chemical_classification 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen 0104 chemical sciences chemistry Molybdenum symbols Sapphire 0210 nano-technology Raman spectroscopy |
| Popis: | The direct deposition of the 2D transition metal dichalcogenide MoS2 via metal-organic vapour phase epitaxy (MOVPE) is investigated. Growth is performed in a commercial AIXTRON horizontal hot-wall reactor. Molybdenum hexacarbonyl (MCO) and Di-tert-butyl sulfide (DTBS) are used as metal-organic precursors for molybdenum and sulfur, respectively. The successful deposition of MoS2 is demonstrated via Raman spectroscopy on various substrates such as sapphire and Si as well as AlN and GaN templates. The influence of growth time on the evolution of layer morphology is investigated. Variation of carrier gas reveals that a pure nitrogen growth atmosphere and a growth temperature of 750 °C improve layer quality. Additionally, a post-deposition annealing process of the grown samples is examined. It is shown that annealing in a pure nitrogen atmosphere at temperatures between 650 °C and 750 °C strongly increases the Raman intensities. |
| Databáze: | OpenAIRE |
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