Dépôt en phase vapeur de Nanostructures (Bi$_x$Sb$_{1– x}$)$_2$Te$_3$ sur des substrats Si/SiO$_2$

Autor: Felix Hansen, Rico Fucke, Titouan Charvin, Samuel Froeschke, Daniel Wolf, Romain Giraud, Joseph Dufouleur, Nico Gräßler, Bernd Büchner, Peer Schmidt, Silke Hampel
Přispěvatelé: Leibniz Institute for Solid State and Materials Research (IFW Dresden), Leibniz Association, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Brandenburg University of Technology [Cottbus – Senftenberg] (BTU), Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter─ct.qmat (EXC 2147, project-id 0392019), European Project: 824140,TOCHA, European Project: 8017439(1981)
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Crystal Growth & Design
Crystal Growth & Design, 2022, 22 (4), pp.2354-2363. ⟨10.1021/acs.cgd.1c01446⟩
ISSN: 1528-7483
1528-7505
Popis: International audience; The tellurides of Bismuth and Antimony (Bi2Te3 and Sb2Te3) are prominent members of the V2VI3 material family that exhibit promising topological properties. We provide a method for the rational synthesis of mixed crystals of these mate-rials ((BixSb1−x)2Te3 with x = 0.1, …, 0.9) by means of a bottom-up CVT approach. Thermodynamic calculations showed the synthesis to be possible in the temperature range of 390 – 560°C without significant enrichment of either component and without adding a transport agent. The starting materials were synthesized and verified by XRD. Optimization exper-iments showed the ideal conditions for nanosheet synthesis to be T2 = 560°C, T1 = 390°C with a reaction time of t = 36 h. Crystals with heights of down to 12 nm (12 quintuple layers) were synthesized and analyzed by means of scanning elec-tron microscopy, energy-dispersive X-ray spectrometry and atomic force microscopy. High resolution transmission elec-tron microscopy confirmed the R3̄m crystal structure, high crystallinity and overall quality of the synthesized (BixSb1−x)2Te3 nanosheets. Magneto-transport measurements revealed that such ternary compounds can have a signifi-cantly reduced carrier density compared to the binary parent compounds.
Databáze: OpenAIRE
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