Pyrazine as a noncovalent conformational lock in semiconducting polymers for enhanced charge transport and stability in thin film transistors
| Autor: | Michael U. Ocheje, Ta-Ya Chu, Mah-Noor Malik, Simon Rondeau-Gagné, Ye Tao, Renée B. Goodman, Madhumitha Yadiki, P. Blake J. St. Onge, Yinghui He |
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| Rok vydání: | 2019 |
| Předmět: |
Organic electronics
chemistry.chemical_classification Materials science Pyrazine business.industry Transistor Nanotechnology 02 engineering and technology General Chemistry Polymer Conjugated system 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention chemistry.chemical_compound Semiconductor chemistry Thin-film transistor law Materials Chemistry Thiophene 0210 nano-technology business |
| Zdroj: | Journal of Materials Chemistry C. 7:11507-11514 |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/c9tc03525g |
| Popis: | Backbone engineering was performed on highly rigid semiconducting polymers to include diketopyrropyrrole (DPP) units combined with pyrazine-containing moieties. These new moieties were shown to improve backbone planarity through a conformational locking effect between nitrogen and sulfur atoms. The new polymers, characterized by various techniques, were shown to possess a highly crystalline and smooth solid-state morphology, optimal for charge transport. To verify the potential of the new semiconductor for organic electronics, a series of organic field-effect transistors was fabricated. Interestingly, the new polymer was shown to possess a charge mobility of 0.27 cm² V⁻¹ s⁻¹ and on/off current ratio of 10⁷, which is an improvement when compared to a thiophene analogue. More importantly, the polymer led to devices with high stability, with a retention of device characteristics when exposed to the same bias stress comparable to a benchmark reference polymer. The utilization of pyrazine-containing moieties as a conformational lock is a promising strategy to achieve a high performance conjugated polymer in a simple manner. Moreover, their utilization in bottom-gate bottom-contact devices highlights the potential of this new semiconductor for fully printed high-performance electronics. |
| Databáze: | OpenAIRE |
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