Carrier localization in the vicinity of dislocations in InGaN
| Autor: | Menno J. Kappers, Peiyu Chen, Matthew Horton, F.C-P. Massabuau, Sneha Rhode, T. J. O'Hanlon, Rafal E. Dunin-Borkowski, Christopher X. Ren, Rachel A. Oliver, András Kovács, Colin J. Humphreys |
|---|---|
| Přispěvatelé: | Massabuau, Fabien [0000-0003-1008-1652], Humphreys, Colin [0000-0001-5053-3380], Oliver, Rachel [0000-0003-0029-3993], Apollo - University of Cambridge Repository |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Microscope Condensed matter physics Field (physics) business.industry Scanning electron microscope General Physics and Astronomy Cathodoluminescence 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 4016 Materials Engineering law.invention Optics Transmission electron microscopy law 0103 physical sciences Resilience (materials science) Dislocation 0210 nano-technology Spectroscopy business QC 40 Engineering |
| ISSN: | 0021-8979 |
| DOI: | 10.17863/cam.8278 |
| Popis: | We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|