GaAs Fabry-Perot modulator for microwave applications

Autor: Peter R. Herczfeld, B.V. Borges, R. Wendt, W.J. Zubrzycki, T.M. Bauer, S. H Kravitz, R.E. Smith, G.A. Vawter, R.F. Corless, J.C. Word, G.R. Hadley
Rok vydání: 2002
Předmět:
Zdroj: Scopus-Elsevier
DOI: 10.1109/sbmomo.1995.509695
Popis: A distributed bragg reflector Fabry-Perot modulator for microwave applications is considered. The device consists of a Fabry-Perot cavity formed by etching gratings on a rib waveguide with a buried GaAs guiding layer. Computer simulations based on the finite difference method were used to model the device. State-of-the-art first order gratings with a pitch of 0.20 /spl mu/m have been successfully fabricated.
Databáze: OpenAIRE