Oxidation in air of nitride bonded silicon carbide ceramic
| Autor: | A. Zymla, J.-B. Guillot, T. Pawlik, V. Zymla, M. Sopicka-Lizer |
|---|---|
| Přispěvatelé: | Laboratoire de Génie des Procédés et Matériaux - EA 4038 (LGPM), CentraleSupélec, Politech Slaska |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
MECHANISM
0209 industrial biotechnology Materials science 02 engineering and technology Nitride 01 natural sciences 010305 fluids & plasmas chemistry.chemical_compound 020901 industrial engineering & automation Refractory Phase (matter) Specific surface area 0103 physical sciences Materials Chemistry Silicon carbide [CHIM]Chemical Sciences Ceramic Physical and Theoretical Chemistry Porosity KINETICS STEAM SI3N4-BONDED SIC CERAMICS COMPOSITE Metallurgy Metals and Alloys Condensed Matter Physics chemistry Chemical engineering visual_art visual_art.visual_art_medium HIGH-TEMPERATURE OXIDATION CO2 SI3N4 Layer (electronics) BEHAVIOR |
| Zdroj: | Revue de Métallurgie Revue de Métallurgie, EDP Sciences, 2004, 101 (5), pp.427-429. ⟨10.1051/metal:2004164⟩ |
| ISSN: | 0035-1563 1156-3141 |
| DOI: | 10.1051/metal:2004164⟩ |
| Popis: | International audience; The rate of air oxidation towards 1,000degreesC of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics. |
| Databáze: | OpenAIRE |
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