Analysis of strained-silicon-on-insulator double-gate MOS structures
| Autor: | N. Barin, Claudio Fiegna, Enrico Sangiorgi |
|---|---|
| Přispěvatelé: | R.P. MERTENS, C. L. CLAEYS, N. Barin, C. Fiegna, E. Sangiorgi |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
education.field_of_study
STRAIN Materials science Silicon Physics::Instrumentation and Detectors business.industry Population chemistry.chemical_element Silicon on insulator MODELLING Strained silicon Condensed Matter::Mesoscopic Systems and Quantum Hall Effect MOSFET chemistry Gate oxide MOBILITY Quantum mechanics Optoelectronics business education Metal gate AND gate |
| Popis: | Ultra-thin body double-gate (DG) MOS structures with strained silicon are investigated by the solution of the 1D Schrodinger and Poisson equations, with open boundary conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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