Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array
| Autor: | Y. Eren Suyolcu, B. Aslan, Melih Korkmaz, Uğur Serincan, Bulent Arikan |
|---|---|
| Přispěvatelé: | Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Infrared business.industry Superlattice Photodetector Interfacial Misfit (Imf) Array 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystallographic defect Lattice Mismatch Electronic Optical and Magnetic Materials Inas/Gasb Superlattice 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering Electric current Dislocation 0210 nano-technology business Current density Dark current |
| Popis: | WOS: 000423857500001 We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40. x. 10-3 A cm-2 and 2.34. x. 1010 cm Hz0.5W(-1) for the SL-GaAs and 9.50. x. 10(-4) A cm(-2) and 4.70. x. 1010 cm Hz0.5W(-1) for the SL-GaSb, respectively. Scientific and Technological Research Council of Turkey (TUBITAK) [111T335] This work was supported in part by the Scientific and Technological Research Council of Turkey (TUBITAK) under the Grant No. 111T335. Authors would like to thank Prof Dr Servet Turan for his valuable support in TEM studies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|