Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process
| Autor: | Halvard Haug, Rune Søndenå, Marie Syre Wiig, Philip Weiser, Eduard Monakhov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Hydrogen Infrared Annealing (metallurgy) Analytical chemistry General Physics and Astronomy Infrared spectroscopy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect Acceptor chemistry 0103 physical sciences Wafer 0210 nano-technology Spectroscopy |
| Zdroj: | Journal of Applied Physics |
| ISSN: | 0021-8979 |
| Popis: | Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degradation observed predominantly in p-type silicon wafers, but the nature of the defect or defects involved in this process is currently unknown. We have used infrared (IR) spectroscopy to detect the vibrational signatures due to the H–B, H–Ga, and H2*(C) defects in thin, hydrogenated, p-type multicrystalline silicon wafers after increasing the optical path length by preparation and polishing the edges of a stack of wafers. The concentrations of the H–B and H–Ga acceptor complexes are reduced to 80% of their starting values after low intensity (5 mW/cm2) illumination at room temperature for 96 h. Subsequent high intensity illumination (70 mW/cm2) at 150 °C for 7–8 h further decreases the concentrations of these defects; to ∼40% (H–B) and ∼50% (H–Ga) of their starting values. Our results show that, with careful sample preparation, IR spectroscopy can be used in conjunction with other techniques, e.g., quasisteady-state photoconductance, to investigate the involvement of different H-related point defects on degradation in solar-grade silicon wafers. |
| Databáze: | OpenAIRE |
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