| Popis: |
We have studied the valence-band electronic structure of \ensuremath{\alpha}-phase, \ensuremath{\beta}-phase, and amorphous silicon nitride samples, using Si L-x-ray emission. Our results are compared with a recent band-structure calculation and show that Si 3d states are necessary to properly describe the upper-valence-band and lower-conduction-band density of states. A prominent feature is seen above the valence band which is attributed to conduction-band states that are populated by the incident electron beam. By reducing the energy of the electron beam it is possible to enhance the surface emission relative to bulk emission, and such spectra are also presented and discussed. |
