A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention
| Autor: | Xiaobing Yan, Mengliu Zhao, Deliang Ren, Zhenyu Zhou, Chao Lu, Hong Wang, Zichang Zhang, Chi-Hsiang Ho, Xinlei Jia, Jianhui Zhao, Yuanyuan Zhang, Tao Yang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Graphene oxide quantum dots Oxide 02 engineering and technology Trapping 01 natural sciences Capacitance law.invention chemistry.chemical_compound law 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics charge trapping memory business.industry Graphene 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Non-volatile memory chemistry Quantum dot Logic gate Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering data retention property 0210 nano-technology business lcsh:TK1-9971 Biotechnology Voltage |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 6, Pp 464-467 (2018) |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2018.2820125 |
| Popis: | Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO2/ZHO/SiO2/Si and Pd/SiO2/ZHO/GOQDs/SiO2/Si are fabricated, measured, and compared. The GOQD-embedded device demonstrates improved memory window size and data retention characteristics. Under a gate sweeping voltage of ±5 V, the memory window of a GOQD-embedded device is 1.67 V, which is 35.7% larger than the same device without using GOQDs. After a retention time of 1.08×104 s, the GOQD-embedded device shows only 1.2% and 3.8% decay in the high-state and low-state capacitances, respectively. The data retention loss of a GOQD-embedded device is reduced by at least 65% when compared to its counterpart, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|