Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
| Autor: | Peng Huang, Thomas Schroeder, Markus Andreas Schubert, Christian Wenger, Jinfeng Kang, Florian Bärwolf, Stefan Petzold, Andrei Gloskovskii, Lambert Alff, Yudi Zhao, S. U. Sharath, Wei Ren, P. Calka, Zuo-Guang Ye, Karol Fröhlich, Gang Niu, Eduardo Perez |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
chemistry.chemical_element 02 engineering and technology RRAM 01 natural sciences Oxygen X-ray photoelectron spectroscopy ddc:670 Oxygen breathing 0103 physical sciences lcsh:TA401-492 HAXPES General Materials Science HfO2 010302 applied physics Hardware_MEMORYSTRUCTURES resistive switching business.industry 021001 nanoscience & nanotechnology Resistive random-access memory chemistry Resistive switching interface Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business |
| Zdroj: | Materials Research Letters 7(3), 117-123 (2019). doi:10.1080/21663831.2018.1561535 Materials Research Letters, Vol 7, Iss 3, Pp 117-123 (2019) |
| ISSN: | 2166-3831 |
| DOI: | 10.3204/pubdb-2019-04829 |
| Popis: | Materials Research Letters 7(3), 117 - 123 (2019). doi:10.1080/21663831.2018.1561535 The HfO2-based resistive random access memory (RRAM) is one of the most promising candidatesfor non-volatile memory applications. The detection and examination of the dynamic behavior ofoxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of theresistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulksensitivehard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnosticdetection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migrationbetween HfO2 and TiN during different RS periods. The results highlight the significance ofoxide/metal interfaces in RRAM, even in filament-type devices. Published by Taylor & Francis, London [u.a.] |
| Databáze: | OpenAIRE |
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