Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs
| Autor: | T.-H. Steinegger, B. Gründig-Wendrock, W. Jantz, M. Jurisch, M. Baeumler, J. R. Niklas |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Photoluminescence business.industry Mechanical Engineering Semiconductor materials Analytical chemistry Photolumineszenztopographie Condensed Matter Physics microwave absoption Mikrowellenabsorption Microwave conductivity Mechanics of Materials PICTS Optoelectronics General Materials Science Si-GaAs Luminescence business photoluminescence topography Microwave Transient spectroscopy Recombination |
| Zdroj: | Materials Science and Engineering: B. :29-32 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(01)00959-x |
| Popis: | Further evidence was found that the 0.8 eV luminescence band in GaAs is correlated to the EL6 defect as identified by photo induced current transient spectroscopy (PICTS). From luminescence topography arguments are put forward that the EL6 defect should not be the dominant recombination centre in GaAs. By the application of microwave detected PICTS it could be shown that the EL6 is definitely not a relevant recombination centre. Recombination takes place most probably via different, partially not jet identified centres. |
| Databáze: | OpenAIRE |
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