Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
| Autor: | Yew Heng Tan, Kwang Hong Lee, Eugene A. Fitzgerald, Adam Jandl, Chuan Seng Tan |
|---|---|
| Přispěvatelé: | Massachusetts Institute of Technology. Department of Materials Science and Engineering, Singapore-MIT Alliance in Research and Technology (SMART), Lee, Kwang Hong, Jandl, Adam Christopher, Fitzgerald, Eugene A, Tan, Chuan Seng |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon business.industry Nucleation chemistry.chemical_element Germanium Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials symbols.namesake chemistry Materials Chemistry symbols Optoelectronics Wafer Electrical and Electronic Engineering Dislocation Raman spectroscopy business |
| Zdroj: | Springer US |
| Popis: | The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92 nm versus 0.98 nm) than Ge film grown on Si (001) with 0° offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6° offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6° offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6° offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation. Singapore. National Research Foundation (Singapore MIT Alliance for Research and Technology’s ‘‘Low energy electronic systems (LEES) IRG’’) Nanyang Technological University (Nanyang Assistant Professorship) |
| Databáze: | OpenAIRE |
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