Reaction mechanism studies on atomic layer deposition process of AlF3
| Autor: | Mikko Ritala, Heta-Elisa Nieminen |
|---|---|
| Přispěvatelé: | Department of Chemistry, Mikko Ritala / Principal Investigator |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
010302 applied physics
Quadrupole mass spectrometry Atomic layer deposition Experimental techniques Reaction mechanisms 116 Chemical sciences Gas phase 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Thin film deposition 01 natural sciences Surfaces Coatings and Films LIF THIN-FILMS Reversible process Quartz crystal microbalance TIF4 LITHD 0103 physical sciences Exchange reactions 0210 nano-technology ALD PROCESS Surface reactions |
| Popis: | In this work, the reaction mechanism in the atomic layer deposition (ALD) process of AlF3 thin films is studied with in situ quartz crystal microbalance and quadrupole mass spectrometer. The depositions are done with AlCl3 and TiF4 as precursors. Similar to many metal fluoride films deposited by ALD, the growth rate of the AlF3 is strongly temperature dependent. In addition, at low temperatures, the growth rate is exceptionally high for a traditional ALD process. In this study, the reasons behind these characteristics are studied and a detailed step-by-step mechanism for the AlF3 film growth process is presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|