Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping
| Autor: | Bulent Arikan, Melih Kaldirim, Melih Korkmaz, B. Aslan, Uğur Serincan |
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| Přispěvatelé: | Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Superlattice Doping Analytical chemistry Residual Doping Substrate (electronics) Photovoltaic effect Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Responsivity Inas/Gasb Hall effect Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Photodetector Molecular beam epitaxy |
| Popis: | WOS: 000362272600008 We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both structures were grown on an n-GaSb substrate using molecular beam epitaxy. The nominally undoped structure (i-SL) presented p-i-n like behavior and showed a photovoltaic mode photoresponse due to the residual doping and native defects in this material system. For similar to 77 K operation, 0.76 and 0.11 A W-1 responsivity values were obtained at 4 mu m from the pin-SL and i-SL structures, respectively. Activation energy analysis showed that the recombination current was dominant in both structures but different recombination centers were involved. The same i-SL structure was also grown on a semi-insulating (SI)-GaAs substrate to study the contribution of the substrate to the carrier density in the SL layers. Temperature dependent Hall effect measurements showed that the nominally undoped structure presented both n-type and p-type conductivities; however, the temperature at which the carrier type switched polarity was observed to be at higher values when the i-SL structure was grown on the SI-GaAs substrate. In addition, a higher carrier density was observed for i-SL on the GaSb substrate than on the GaAs substrate. Scientific and Technological Research Council of Turkey (TUBITAK) [111T335]; Anadolu University [BAP-1110F169, BAP-1205F082] This work was supported in part by the Scientific and Technological Research Council of Turkey (TUBITAK) under the Grant No. 111T335 and by Anadolu University under the projects BAP-1110F169 and BAP-1205F082. |
| Databáze: | OpenAIRE |
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