Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device
| Autor: | Yazan Barazi, Nicolas Rouger, Jean-Marc Blaquiere, Frédéric Richardeau |
|---|---|
| Přispěvatelé: | Convertisseurs Statiques (LAPLACE-CS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Richardeau, Frédéric, Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique (Toulouse) (Toulouse INP) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Fault under load
Computer science 020209 energy 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY Gate-charge Robustness (computer science) 0202 electrical engineering electronic engineering information engineering Electronic engineering Hardware_INTEGRATEDCIRCUITS SiC MOSFET Electrical and Electronic Engineering Safety Risk Reliability and Quality Robustness Hard switching fault Power device 020208 electrical & electronic engineering [SPI.NRJ]Engineering Sciences [physics]/Electric power Charge (physics) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) [SPI.NRJ] Engineering Sciences [physics]/Electric power Hardware_LOGICDESIGN |
| Zdroj: | Microelectronics Reliability Microelectronics Reliability, Elsevier, 2021, pp.114246. ⟨10.1016/j.microrel.2021.114246⟩ 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021 32th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2021, Oct 2021, Bordeaux, France |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2021.114246⟩ |
| Popis: | International audience; This paper focuses on the extensive robustness validation of a gate charge detection method designed for SiC MOSFETs under short-circuit operation, and, in terms of failure-modes. The benefits of having a fast (submicrosecond-150ns) detection method is illustrated by a 1D thermo-metallurgical simulation. This method is integrated owing to an optimized SMD/PCB technology (Surface-Mount Device/ Printed Circuit Board). |
| Databáze: | OpenAIRE |
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