Radiative and Nonradiative Recombination Processes in GaN-Based Semiconductors

Autor:	Koichi Okamoto, Kunimichi Omae, Kenichi Inoue, Sg. Fujita, Yoichi Kawakami, Yukio Narukawa, Tomoaki Izumi, S. Sajou, Akio Kaneta, Takashi Mukai
Rok vydání:	2001
Předmět:	Photoluminescence business.industry Chemistry Exciton Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials Ultrafast laser spectroscopy Radiative transfer Optoelectronics Near-field scanning optical microscope business Spectroscopy Non-radiative recombination
Zdroj:	physica status solidi (a). 183:41-50
ISSN:	1521-396X 0031-8965
DOI:	10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co;2-v
Popis:	Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of In x Ga 1 -x N-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6d42bca3ece4f4559f28b0c3f713e8f https://doi.org/10.1002/1521-396x(200101)183:1<41::aid-pssa41>3.0.co Zobrazit plný text záznamu Plný text