Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy
| Autor: | E. D. Leshchenko, P Kuyanov, Vladimir G. Dubrovskii, Ray R. LaPierre |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Morphology (linguistics) Silicon business.industry Nanowire Physics::Optics chemistry.chemical_element Radius Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Flux ratio Condensed Matter::Materials Science chemistry Kinetic equations Quantum dot Optoelectronics business Molecular beam epitaxy |
| Zdroj: | 2018 International Conference Laser Optics (ICLO) |
| DOI: | 10.1109/lo.2018.8435415 |
| Popis: | The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots. |
| Databáze: | OpenAIRE |
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