Tunable, Dual-Gate, Silicon-on-Insulator (SOI) Nanoelectromechanical Resonators
| Autor: | Jeffrey F. Rhoads, Hossein Pajouhi, Lin Yu, Saeed Mohammadi, Molly R. Nelis |
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| Rok vydání: | 2012 |
| Předmět: |
Nanoelectromechanical systems
Materials science business.industry Transistor Dual-gate nanoresonators electrostatic tuning nonlinear tuning silicon nanowire NANOMECHANICAL RESONATORS MASS DETECTION ELECTROMECHANICAL RESONATOR PARAMETRIC RESONANCE NANOTUBE OSCILLATORS FABRICATION RESOLUTION DEVICES SENSOR Silicon on insulator Nanotechnology Substrate (electronics) Computer Science Applications law.invention Nanoscience and Nanotechnology Resonator CMOS law MOSFET Optoelectronics Electrical and Electronic Engineering business Microfabrication |
| Zdroj: | Birck and NCN Publications |
| Popis: | Resonant nanoelectromechanical systems (NEMS) have the potential to have significant impact in mass sensing, signal processing, and field detection applications, if the challenges associated with processing, material, and geometric variability can be mitigated. The research presented here details a breakthrough in the design and development of resonant NEMS aimed at addressing these challenges. Specifically, this study details the fabrication, characterization, and tuning of dual-gate silicon nanoelectromechanical resonators, which are transduced electrostatically and realized with close to 100% yield. These devices are fabricated on a silicon-on-insulator (SOI) substrate using only top-down microfabrication techniques and can be easily integrated with SOI-CMOS transistors, enabling the development of fully integrated CMOS-NEMS with highly tunable nonlinear frequency response characteristics. |
| Databáze: | OpenAIRE |
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