Green InGaN/GaN based LEDs: high luminance and blue shift
| Autor: | François Olivier, Ludovic Dupré, Francois Templier, Stéphanie Le Calvez, Anis Daami, Christophe Licitra, Franck Henry |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Architectures, Conception et Logiciels Embarqués-LETI (DACLE-LETI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), SPIE, European Project: 731974,VOSTARS, European Project: 755497,Hilico, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA) |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry green µLED 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology 01 natural sciences Blueshift law.invention InGaN/GaN [SPI]Engineering Sciences [physics] blue shift law Quantum dot Electric field 0103 physical sciences Optoelectronics Quantum efficiency QCSE 0210 nano-technology business Quantum well Light-emitting diode |
| Zdroj: | Gallium Nitride Materials and Devices XIV Gallium Nitride Materials and Devices XIV, SPIE, Feb 2019, San Francisco, United States. pp.21, ⟨10.1117/12.2509396⟩ |
| DOI: | 10.1117/12.2509396⟩ |
| Popis: | Proceedings of SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180M (1 March 2019); International audience; We report in this paper electro-optical results on InGaN/GaN based green micro light-emitting diodes (µLEDs). Current-light-voltage measurements reveal that the external quantum efficiency (EQE) behavior versus charge injection does not follow the ABC model prediction. Light-emission homogeneity investigation, carried out by photoluminescence mapping, shows that the Quantum Confinement Starck Effect (QCSE) is less significant at the edges of µLEDs. Electroluminescence shows a subsequent color green-to-blue deviation at high carrier injection levels. The extracted spectra at different current injection levels tend to show the appearance of discrete wavelength emissions. These observations may enhance the hypothesis that higher-energy excited-levels in InGaN quantum wells may also contribute to the blue shift, solely attributed to QCSE lessening under intense electric field magnitudes. We hereby present first results dealing with green µLEDs electro-optical performances with regards to their size. |
| Databáze: | OpenAIRE |
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