Electrical Properties of MOS Capacitor with TiO2/SiO2 Dielectric Layer
| Autor: | Adem Tataroğlu, Halil İbrahim Efkere, Süleyman Özçelik, Tunc Sertel, S. Ş. Çetin |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Admittance Materials science Equivalent series resistance business.industry Oxide 02 engineering and technology Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention Capacitor chemistry.chemical_compound chemistry law 0103 physical sciences Optoelectronics Wafer Radio frequency Fourier transform infrared spectroscopy 0210 nano-technology business |
| Zdroj: | Silicon. 12:2879-2883 |
| ISSN: | 1876-9918 1876-990X |
| Popis: | The TiO2/SiO2 film being the dielectric layer was grown on the n-Si wafer using radio frequency (RF) magnetron sputtering. Thus, the Au/TiO2/SiO2/n-Si metal-oxide-semiconductor (MOS) capacitor was fabricated with the forming of metal contacts. The optical properties of the oxide film were analyzed by Fourier transform infrared (FTIR) and Ultraviolet-visible (UV-Vis) spectroscopy. The electrical properties of the MOS capacitor were investigated using admittance (Y = G + i omega C) measurements performed at various frequencies. The series resistance (R-s) parameter of the capacitor was derived from the conductance method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink