100°C, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications
| Autor: | M. Holm, R. Ghin, M. Meliga, Gordon Burns, P. Crump, P. Gotta, C. Kompocholis, A. Davies, Michele Agresti, Paul M. Charles, A. Taylor, D. Bertone, P. Valenti, Ruiyu Fang, G. Magnetti, J. Massa, G. Rossi, Graham Michael Bury St Edmunds Berry, Paul Ryder, Roberto Paoletti, Giancarlo Meneghini |
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| Rok vydání: | 2003 |
| Předmět: |
Ethernet
Materials science Extinction ratio Error floor business.industry Optical power Laser law.invention Semiconductor laser theory Gallium arsenide chemistry.chemical_compound Optics Transmission (telecommunications) chemistry law Indium phosphide Bit error rate Optoelectronics Stimulated emission business Quantum well |
| Zdroj: | Optical Fiber Communication Conference and Exhibit. |
| DOI: | 10.1109/ofc.2002.1036453 |
| Popis: | Combining an optimised active region based on InGaAsP strained MQW (multi quantum well) and a low parasitic lateral confinement region, we fabricated 10 Gb directly modulated uncooled DFB lasers which represent, we believe, the state of art. Our DFB lasers work up to 100/spl deg/C (substrate base temperature) with eye diagram perfectly open (showing an extinction ratio > 5 dB) and with bit error rate over 10 km without an error floor. Up to 90/spl deg/C our DFBs show threshold current as low as 29 mA. optical power as high as 13 mW and meet perfectly a 10 Gb scaled Ethernet mask with extinction ratio > 6 dB. |
| Databáze: | OpenAIRE |
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